hall coefficient
英 [hɔːl ˌkəʊɪˈfɪʃnt]
美 [hɔːl ˌkoʊɪˈfɪʃnt]
网络 霍尔系数; 霍耳系数; hall系数
双语例句
- Apparatus the Semiconductor Hall Coefficient and Carrier Concentration at the Conditions of Different Temperatures
变温条件下半导体霍尔系数及载流子浓度的测量 - Extrinsic semiconductor single crystals& measurement of Hall mobility and Hall coefficient
GB/T4326-1984非本征半导体单晶霍尔迁移率和霍尔系数测量方法 - We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。 - Hall coefficient measurement of conductive and transparent indium tin oxide films
锡掺杂的氧化铟透明导电膜的霍尔系数测量 - The phenomena, such as negative magnetoresistance, hysteresis, anomaly of Hall coefficient, etc., were observed for the first time.
首次观察到了负磁阻效应、回滞、Hall系数反常等现象。 - There are Pockels Effect and Faraday Effect in BSO crystal, a beam of polarizer light through BSO crystal will be adjusted by electric field and magnetism field. With the character, a new system is designed in this paper for a material Hall coefficient measurement.
硅酸铋（BSO）晶体具有泡克尔斯效应和法拉第磁光效应，通过BSO晶体的偏振光将受电场和磁场的调制，利用这一特性，设计了一种基于BSO晶体传感器的材料霍尔系数测试系统。 - A new type of PTCR ceramic materials based on ( Ba, Sr) TiO 3 with linear resistance temperature characteristics on rectangular coordinates are investigated with the help of complex impedance analysis and measurements for Hall coefficient and zero power R T characteristics.
通过对材料的复阻抗频谱、霍尔系数及零功率电阻温度等电学特性的测试和分析，对（Ba，Sr）TiO3系线性PTCR陶瓷进行了相关研究。 - The Hall effect properties of the film were characterized by four-probe method, and the result showed that both the Hall coefficient and the Hall resistivity increase with temperature decreasing.
用四探针法检测了薄膜的霍尔特性，发现随温度的降低薄膜的霍尔系数、霍尔电阻率均增加。 - The experimental results show that both the superconducting transition temperature ( Tc) and the charge carrier concentration ( PH) deduced from the Hall coefficient of the samples drop monotonously with the increase of Pr content.
实验结果表明随着Pr在Ba晶位替代量的增加，超导转变临界温度Tc和由Hall系数推算的荷电载流子浓度PH均单调下降。 - The temperature dependences of resistivity and Hall coefficient of MgB 2 and Mg 0.93 Li 0.07 B 2 were measured, and the temperature dependence of cot Θ H was calculated.
测量了MgB2和Mg0.93Li0.07B2的电阻率ρ（T）与霍尔系数RH（T）的温度依赖关系。 - With Hall-voltage test, Hall coefficient ( RH)-temperature ( T) curves are determined, and at low temperature range quasi p-type and n-type semiconductor characteristics are found.
测出它们的霍耳系数与温度的关系RH-1/T曲线，发现低温区有类p-型和n-型两类半导体特性。 - A method is described for contactless measurement on Hall coefficient of semi-conductors by means of microwave technique.
本文描述用微波技术无接触测量半导体霍耳系数的方法。 - Effective parameter for crystallization study of amorphous magnetic alloys& anomalous Hall coefficient
一个研究非晶磁性合金晶化过程的有效参量&反常Hall系数 - A Design for a Material Hall Coefficient Measurement System
一种材料霍尔系数测试系统的设计 - Magnetoresistance oscillation and Hall coefficient oscillation of p-type zero-gap Hg_ ( 0.97) Mn_ ( 0.03) Te have been measured at low temperature ( T < 4.2K) and weak magnetic field ( B < 0. 6T).
p型零禁带Hg（0.97）Mn（0.03）Te在深低温（T<4.2K）弱磁场（B<0.6T）区出现磁阻振荡及霍耳系数振荡。 - Theoretical and Experimental Evidences of the Hall Coefficient Extremum in p-Type Semiconductor
p型半导体霍尔系数极值新结论的理论与实验验证 - In this work, the empirical dependances of superconducting parameters and phonon spectrum parameters on the Hall Coefficient, and the problem on the Tc in amorphous non-transition metals are studied.
本文中分析了非过渡金属非晶态超导体的超导参量、声子谱参量与霍耳系数之间的经验关系。 - Hall coefficient R H increased with increasing Ce filling fraction. Hole concentration p and electrical conductivity σ decreased with increasing Ce filling fraction.
霍尔系数RH随Ce填充分数的增加而增加，空穴浓度p和电导率σ随Ce填充分数的增加而减少。 - Measurement on Hall coefficient of semiconductors by microwave technique, using a degenerate dual-mode cavity
用简并双模腔测量微波霍耳迁移率 - Mass Spectrographic Analysis of InP Material and its Hall Coefficient Measure
InP材料的质谱分析及霍耳系数测量 - Study on the type of MCT and the sign of its hall coefficient
碲镉汞材料的P、N型和其霍耳系数的正负 - By measuring the Hall coefficient and electric conductivity of the surface, the concentration of arsenic diffused layers in germanium is determined.
用霍尔效应和平均电导法测量了锗中砷扩散层的表面浓度。 - Calculation of Hall Coefficient for Heterogeneous Material Sample
非均匀材料样品的霍尔系数的计算 - The measurement of Hall coefficient suggests the type of charge carriers is hole, and the Hall coefficient of Mg 0.93 Li 0.07 B 2 becomes a little smaller compared with that of MgB 2 which is attributed to Li doping.
霍尔系数的测量结果表明，MgB2和Mg0.93Li0.07B2的载流子类型为空穴型，二者的霍尔系数都随温度升高而减小，且Mg0.93Li0.07B2的霍尔系数比MgB2略有减小，这可能与Li掺杂引入空穴有关。 - Hall coefficient of thin films gradually decreases with increasing annealing temperature, it shows that the carrier concentration was increased.
薄膜的霍尔系数随退火温度升高逐渐减小，说明退火影响了薄膜的载流子浓度。 - Measured resistivity and Hall coefficient of aluminum films.
测量了铝膜的电阻率和霍尔效应参数。 - As the temperature changes from 100 K to 300 K, the Hall coefficient and the resistivity of the films decrease, while the carrier density increase and Hall mobility shows no great changes.
对同一条件下制备得到的氮化铜纳米薄膜而言，在温度从100K到300K的变化区间，薄膜的霍尔系数和霍尔电阻率降低，载流子浓度增加而霍尔迁移率基本保持不变。 - The Hall coefficient of the aluminum film samples bigger than the bulk metal aluminum, Hall coefficient gradually increases with the decrease of the aluminum film thickness.
发现所测样品的霍尔系数均比块状金属铝的霍尔系数大，且随铝膜厚度的减小，霍尔系数逐渐增大，说明减小铝膜的厚度可以降低载流子的浓度，从而增大材料霍尔系数。